SIDC112D170H edited by infineon technologies, i mm psd, l4502a, edition 0.9, 22.02.2010 fast switching diode this chip is used for: ? power modules features: ? 1700v technology, emitter controlled diode 3 th generation, 200 m chip ? soft, fast switching ? low reverse recovery charge ? small temperature coefficient applications: ? resonant applications, drives a c chip type v r i f die size package SIDC112D170H 1700v 205a 11.8 x 9.52 mm 2 sawn on foil mechanical parameters raster size 11.8 x 9.52 area total 112.3 anode pad size 9.78 x 7.5 mm 2 thickness 200 m wafer size 150 mm max. possible chips per wafer 114 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ?system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm; max 1.2mm recommended storage environment store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c
SIDC112D170H edited by infineon technologies, i mm psd, l4502a, edition 0.9, 22.02.2010 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm t vj = 25 c 1700 v continuous forward current i f t vj < 150c 1 ) maximum repetitive forward current i frm t vj < 150c 410 a junction temperature range t vj -40...+175 c operating junction temperature t vj -40...+150 c dynamic ruggedness2 ) p max i fmax = 410a, v rmax = 1700v, t vj 150c tbd kw 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation static characteristic (tested on wafer), t vj = 25 c value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1700v 20 a cathode-anode breakdown voltage v br i r =0 .25m a 1700 v diode forward voltage v f 3) i f =2 05 a 1.9 2.3 v 3) v f tested at lower current further electrical characteristics switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
SIDC112D170H edited by infineon technologies, i mm psd, l4502a, edition 0.9, 22.02.2010 chip drawing a: anode pad a
SIDC112D170H edited by infineon technologies, i mm psd, l4502a, edition 0.9, 22.02.2010 further electrical characteristics this chip data sheet refers to the module data sheet description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device according to mil-std 883 revision history version subjects (major chang es since last revision) date published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.
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